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PD - 91754
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
30Volt, 0.009, MEGA RAD HARD HEXFET
International Rectifier's RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
(R)
IRHNB7Z60 IRHNB8Z60
N-CHANNEL
MEGA RAD HARD
Product Summary
Part Number IRHNB7Z60 IRHNB8Z60 BVDSS 30V 30V RDS(on) 0.009 0.009 ID 75*A 75*A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 75* 75* 300 300 2.4 20 500 75 30 0.35 -55 to 150
Pre-Irradiation
IRHNB7Z60, IRHNB8Z60 Units A
W W/K V mJ A mJ V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s) 3.5 (typical)
g
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1
7/16/98
IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 31 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.023 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.8 2.8 -- -- 0.009 4.0 -- 25 250 100 -100 421 104 74 32 370 150 280 -- -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID =75A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 75A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = Max Rating x 0.5 VDD = 15V, ID = 75A, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
Measured from drain Modified MOSFET symlead, 6mm (0.25 in) bol showing the internal from package to center inductances. of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad.
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
7000 4800 1800
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 75* 300 1.8 245 1.1
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25C, IS = 75A, VGS = 0V Tj = 25C, IF = 75A, di/dt 100A/s VDD 50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
-- -- -- 1.6 0.42 -- K/W
Test Conditions
soldered to a 2" square copper-clad board
* Current is limited by internal wire diameter
2
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IRHNB7Z60, IRHNB8Z60 Devices
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier comprises three radiation environments.
Radiation Characteristics Pre-Irradiation
Table 1, column 2, IRHNB8Z60.The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide Every manufacturing lot is tested in a low dose rate a direct comparison. (total dose) environment per MlL-STD-750, test method 1019 condition A. International Rectifier has High dose rate testing may be done on a special 12 imposed a standard gate condition of 12 volts per request basis using a dose rate up to 1 x 10 Rads (Si)/Sec (See Table 2). note 6 and a VDS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-irra- International Rectifier radiation hardened HEXFETs diation limits of the devices irradiated to 1 x 105 Rads have been characterized in heavy ion Single Event (Si) are identical and are presented in Table 1, col- Effects (SEE) environments. Single Event Effects charumn 1, IRHNB7Z60. Post-irradiation limits of the de- acterization is shown in Table 3. vices irradiated to 1 x 106 Rads (Si) are presented in
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRHNB7Z60 IRHNB8Z60
100K Rads (Si) 1000K Rads (Si) Units
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=0.8 x Max Rating, VGS =0V VGS = 12V, ID =15A TC = 25C, IS = 15A,VGS = 0V
Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage 30 2.0 -- -- -- -- --
Max -- 4.0 100 -100 25 0.009 1.8
Min 30 1.25 -- -- -- -- --
Max -- 4.5 100 -100 50 0.03 1.8 V nA A V
Table 2. High Dose Rate
Parameter
VDSS IPP di/dt L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max Units Test Conditions -- -- 24 -- -- 24 V Applied drain-to-source voltage during gamma-dot -- 140 -- -- 140 -- A Peak radiation induced photo-current -- 800 -- -- 160 -- A/sec Rate of rise of photo-current 0.1 -- -- 0.8 -- -- H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Cu
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
3x 105
Range (m)
~43
VDSBias (V)
26
VGS Bias (V)
-5
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3
IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
1000
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
5.0V
10 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
10 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A
I D , Drain-to-Source Current (A)
1.5
100
1.0
0.5
10 5 6 7 8
15
V DS = 50V 20s PULSE WIDTH 10 11 9 12
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
15000
VGS , Gate-to-Source Voltage (V)
12000
VGS = Ciss = C = C Crss = oss oss
C, Capacitance (pF)
Ciss
9000
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 75A
16
VDS = 24V VDS = 15V
12
6000
C rss
8
3000
4
0 1 10 100
0 0 100
FOR TEST CIRCUIT SEE FIGURE 13
200 300 400
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
100
TJ = 150 C
I D , Drain Current (A)
TJ = 25 C
100us
100
1ms
10
1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0 6.0
10
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
160
LIMITED BY PACKAGE
VGS
120
VDS
RD
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
12V
80
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
40
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
1500
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
1200
TOP BOTTOM ID 34A 47A 75A
VD S
L
D R IV E R
900
RG
D .U .T
IA S
+ - VD D
A
600
12V 20V
tp
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
300
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNB7Z60, IRHNB8Z60 Devices
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. VDD = 25V, starting TJ = 25C, EAS = [0.5 * L * (IL2)] Peak IL = 75A, VGS = 12V ISD 75A, di/dt 94A/s, VDD BVDSS, TJ 150C Suggested RG = 0 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Pre-Irradiation
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-irradiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test conditions are identical to facilitate direct comparison for circuit applications.

Case Outline and Dimensions -- SMD-3
SMD-3
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8
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